Electronics & ICT
Review Papers:
(1) H. Akinaga and H. Shima, Resistive Random Access Memory (ReRAM)
 Based on Metal Oxides, Proceedings of the IEEE 98 (2010) 2237.
(2) H. Akinaga, Recent Advances and Future Prospects in Functional-Oxide
 Nanoelectronics: The Emerging Materials and Novel Functionalities that
 are Accelerating Semiconductor Device Research and Development,
 Jpn. J. Appl. Phys. 52 (2013) 100001.
抵抗変化型不揮発性メモリの動作メカニズム
Mechanism_of_ReRAM_2015