Memristors With Controllable Data Volatility by Loading Metal Ion-Added Ionic Liquids
H. Sato, H. Shima, T. Nokami, T. Itoh, Y. Honma, Y. Naitoh, H. Akinaga. and K. Kinoshita
Frontiers in Nanotechnology 3, 660563 (2021).
https://www.frontiersin.org/articles/10.3389/fnano.2021.660563/full


Electrode Material Dependence of Resistance Change Behavior

in Ta2O5 Resistive Analog Neuromorphic Device,

H. Shima, M. Takahashi, Y. Naitoh, and H. Akinaga,

IEEE Journal of the Electron Devices Soc. 6, pp. 1220-1226 (2018).

https://ieeexplore.ieee.org/document/8495005


Investigation of switching mechanism in HfOx-ReRAM

under low power and conventional operation modes,

W. Feng, H. Shima, K. Ohmori, and H. Akinaga,

Scientific Reports 6, 39510 (2016).

https://www.nature.com/articles/srep39510


Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics,

H. Akinaga,

Japanese Journal of Applied Physics, 52, 100001 (2013).

https://iopscience.iop.org/article/10.7567/JJAP.52.100001


Resistive Random Access Memory (ReRAM) Based on Metal Oxides,

H. Akinaga and H. Shima,

Proceedings of the IEEE 98, pp. 2237-2251 (2010).

https://ieeexplore.ieee.org/document/5607274


Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity,

N. Zhong, H. Shima, and H. Akinaga,

Applied Physics Letters, 96, 042107 (2010).

https://aip.scitation.org/doi/10.1063/1.3299011


Resistive Random Access Memory (ReRAM) Based on Metal Oxides,

H. Akinaga and H. Shima,

Proceedings of the IEEE 98, pp. 2237-2251 (2010).

https://ieeexplore.ieee.org/document/5607274


Switchable rectifier built with Pt/TiOx/Pt trilayer,

H. Shima, N. Zhong, and H. Akinaga,

Applied Physics Letters, 94, 082905 (2009).

https://aip.scitation.org/doi/10.1063/1.3068754

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